A variety of III-V Compound Semiconductor materials are used to make detectors ranging from the ultraviolet at 190 nm with GaAsP, to the infrared at 22 µm with liquid nitrogen cooled HgCdTe and are available as photoconductive or photovoltaic detectors. Cooling of the infrared sensitive devices can be achieved using either a thermoelectric cooler or liquid nitrogen in a dewar. Applications range from measuring ambient light in consumer products to detection of a carbon dioxide(CO2 ) laser.
A variety of III-V Compound Semiconductor materials are used to make detectors ranging from the ultraviolet at 190 nm with GaAsP, to the infrared at 22 µm with liquid nitrogen cooled HgCdTe and are available as photoconductive or photovoltaic detectors. Cooling of the infrared sensitive devices can be achieved using either a thermoelectric cooler or liquid nitrogen in a dewar. Applications range from measuring ambient light in consumer products to detection of a carbon dioxide(CO2 ) laser.