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LD Monitor

For monitoring the power in a wavelength locker or for power stabilization of a laser diode Hamamatsu offers a number of InGaAs photodiodes mounted on ceramic substrates. When space is a premium the back thinned G9230-01 LD monitor is preferred because the photodiode is directly soldered to the substrate without any need for wire bonding. The diameter of the active area varies from 0.3 mm to 1 mm.

 

Part Number
 
Type
 
Package
 
Active
Dia/L
mm  
Min

mm  
Max

mm  
Peak

mm  
Peak
Sens.
A/W  
Max
ID
nA  
fc
MHz  
CT
pF  
G9906-01      InGaAs PIN photodiode DO-17 (small type 1 pin) 0.3 0.95 1.7 1.55 0.95 0.5 500 6
G9230-01      InGaAs PIN photodiode Chip Carrier 0.3 0.95 1.7 1.55 0.95 1.5 400 5
G8941-03      InGaAs PIN photodiode Chip Carrier 0.3 0.9 1.7 1.55 0.95 1.5 400 5
G8941-02      InGaAs PIN photodiode Chip Carrier 0.5 0.9 1.7 1.55 0.95 2.5 200 12
G8941-01      InGaAs PIN photodiode Chip Carrier 1 0.9 1.7 1.55 0.95 5 35 90
Part Number
Type
Package
Active
Dia/L
Min

Max

Peak

Peak
Sens.
Max
ID
fc
CT
 
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