Silicon photodiodes are semiconductor light sensors that generate a current or voltage when the P-N junction in the semiconductor is illuminated by light. These devices feature excellent linearity with respect to incident light, low internal noise, and a wide spectral response. They have a long life, and they are mechanically rugged, compact, and lightweight.

To learn more about them including sample circuits, consult the Photodiode Technical Guide. Suggested choices for silicon photodiodes can be found in the Selection Guide.

Photodiodes can be classified by function and construction as follows:

1. Silicon photodiodes: Featuring high sensitivity and low dark current, these photodiodes are specifically designed for precision photometry in a wide range of fields.
2. PIN photodiodes: These photodiodes deliver a wide bandwidth with a low bias, making them ideal for high-speed photometry as well as optical communications.
3. Silicon photodiode with preamp/cooler: Our Si photodiodes incorporate a photodiode and a low-noise preamplifier chip into the same package. 
4. Silicon photodiode array: Silicon photodiode arrays consist of multiple elements of photodiode, formed in a linear or matrix arrangement in one package. 
5. APD (avalanche photodiode): A silicon avalanche photodiode (Si APD) has an internal gain mechanism, fast time response, and high sensitivity in the UV to near infrared region.
6. X-ray photodiodes: They are used for ionizing radiation and high energy particle detection.
7. Silicon photodiodes can be combined either monolithically or as hybrids with signal processing to create powerful Photo IC sensors or MOST® optical communication receivers and transmitters.