Silicon avalanche photodiodes (Si APD) have an internal gain mechanism, fast time response, low dark current and high sensitivity in the UV to near infrared region. Hamamatsu offers Si APDs with active areas ranging from 0.2 mm to 5.0 mm in diameter. The APDs are hermetically sealed in metal packages.
While avalanche photodiodes are limited to gains below 200, they have excellent quantum efficiency in the near infrared (such as the S8890 and S9251 series). Low-bias, infrared-sensitive avalanche photodiodes have a typical breakdown voltage of 150 V. APDs with visible sensitivity and APD arrays are also available. For ease of use, we recommend an APD module that incorporates an APD, power supply, and amplifier in one package.
Applications for APDs include optical fiber communication, spatial light transmission, low-light-level detection, high-speed bar code reader, laser radar, and biomedical devices. APDs are also widely used in high-energy physics experiments. In weak light applications where high magnetic fields are applied, an APD is often the only choice.
Hamamatsu Photonics has specially developed APDs for CERN's LHC - CMS experiment to withstand very high radiation produced by the collisions during 10 years of operation of the LHC. Hamamatsu Photonics received the CERN Award for its close collaboration and special efforts over many years to reach the goal of delivering high volume, large surface and radiation hard APDs to the CMS-Electro Magnetic Calorimeter.
Technical data and operation of APDs can be found in Characteristics and Use of Si APD. The article Light Levels and Noise, Guide Detector Choices is useful in determining if an APD is an appropriate detector. To sort through the various APDs we manufacture, use filters on the product table below or use the “Parametric Search” link at left. For more information about specific products, download the datasheet (PDF) from the table below or use the “Request Info” link at left to contact us.
