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Electro- and Photoluminescence analysis

Detection of luminescence signals from wafer, solar cells and solar panels have become major techniques for characterization and quality inspection. They are applied for silicon based solar detectors as well as for thin film and organic devices. Two methods are applied: Electroluminescence (EL) and Photoluminescence (PL)
 
Hamamatsu is offering  complete luminescence analysis systems as well as individual cameras for luminescence imaging.

Luminescence Analysis system

(for further information please click here)

About Electroluminescence technique
When applying a forward biased voltage to a photovoltaic device or illuminating it with light, a weak amount of light can be detected, which originates from light emitted by minority carrier recombination. The amount of the light can be quantitatively analyzed to characterize carrier lifetime and sheet resistance. The spatial distribution indicates defects (such as micro-cracks), material inhomogeinities, delaminations and many other phenomena which are all relevant for the quality of photovoltaic detectors. The recombination radiation is typically centered in the near infrared wavelength region. In case of silicon materials it is centered at 1100 nm.
When applying a reversed bias voltage to a photovoltaic device, weak light signals can be detetected even below its break down voltage level caused by defects (e.g. shunts) of a solar device.
 
About Photoluminescence technique
When light is shining on a semiconductor (excitation),  a photoluminescence signal is generated (emission). By spectrally separating the excitation and emission signal and imaging the luminescence signal by a sensitive camera, characterisation and defect analysis of raw bulk material, wafers in process, finished cells is possible.
Cell efficiency, material properties, process failures or cracks can be analyzed.
 
Cameras for luminescence analysis 
For these applications highly sensitive cameras are required. In order to meet the varying demands of cell and panel inspection in quality assurance as well as in basic research, a broad line of products is offered. All cameras are optimized towards high sensitivity in the near infrared range.
 

Part number
 
Name of product
 
Min
 nm  
Max
 nm  
Shutter
 
Horiz. pixels
 
Vertical pixels
 
Frame Rate
 fps  
Read
Noise
 e-r.m.s.  
Full well capacity
 e-  
A/D converter
 bit  
External control
 
C10633      Near Infrared Camera 320 256
C10600-10B ORCA-R2    1k x 1k, 28 MHz digital CCD camera, cooled 300 1050 No 1344 1024 Max. with binning, sub-array: 115.1 6 (normal scan) or 10 (fast scan) High dynamic range OFF: 18000 12 or 16 IIDC 1394-Based Digital Camera Specification Ver. 1.3.1
C9100-14 (ImageM-1K)    ImagEM-1K (Back-Thinned Electron Multiplier CCD Camera) No 1024 1024 Fastest in EM-CCD mode (with binning and subarray) 9.5fps to 231 EM-CCD Gain 4x: 11 MHz: 12 e r.m.s., 2.75 MHz: 10 e r.m.s.,  0.69 MHz: 4
EM-CCD Gain 1200x: at all clock speeds: <1
400,000 e-, Max 730,000 16 Camera link
C9100-13    ImagEM Enhanced (Back-Thinned Electron Multiplier CCD Camera) No 512 512 Fastest in EM-CCD mode (with binning and subarray) 31.9 fps to 404 EM-CCD Gain 4x: 11 MHz: 25 e r.m.s., 2.75 MHz: 20 e r.m.s.,  0.69 MHz: 8
EM-CCD Gain 1200x: at all clock speeds: <1
370,000 e-, Max 800,000 16 Camera link
C8800-21C   1k x 1k. 30Hz. Digital CCD Camera, cooled 400 1050 No 1000 1000 159 with binning 25 23 12 Camera Link
C8484-05G02 (Orca-05G)   Digital CCD Camera, cooled 300 980 electronic shutter 1344 1024 43 with binning 6 15 12 IEEE 1394
C8484-03G02 (Orca-03G)    Digital CCD Camera, cooled 300 980 electronic shutter 1344 1024 43 with binning 6 15 12 IEEE 1394
C8484-03G01 (Orca-03)    Digital CCD Camera, cooled 300 980 electronic shutter 1344 1024 43 with binning 6 15 12 IEEE 1394
Part number
Name of product
Min
Max
Shutter
Horiz. pixels
Vertical pixels
Frame Rate
Read
Noise
Full well capacity
A/D converter
External control
 
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